radiometrically tested alingap ii led lamps for sensor-based applications data sheet features characterized by radiometric intensity high optical power output extremely long useful life low power consumption well defined spatial radiation patterns 639 nm peak red color ?0 viewing angle high operating temperature: t jled = +130 c superior tesistance to moisture suitable for outdoor use benefits radiometric led characterization decreases system variability improved system reliability visual styling visible color for improved application safety on/off indication suitable for a variety of sensor- based applications applications photo sensor stimulus infrared emitter replacement solid state optical mouse sensors surface imaging sensors optical position and motion sensors human interface devices computer printer dot quality control battery powered systems description radiometrically tested precision optical performance alingap ii (aluminum indium gallium phosphide) leds offer increased sensor-based application design flexibility. high-resolution radiometric intensity bins (mw/sr) enable customers to precisely match led lamp performance with sensor functionality. visible leds offer new styling alternatives ?light can be leveraged to develop more attractive products. in comparison to invisible infrared sources, safety concerns are significantly improved by the human autonomic pupil response and reflexive movement away from bright light. visible leds further indidcate system on / off status. the alingap ii technology provides extremely stable light output over very long periods of time, with low power consumption. these lamps are made with an advanced optical grade epoxy system offering superior high temperature and moisture resistance performance in outdoor systems. the epoxy contains both uv-a and uv-b inhibitors to reduce the effects of long term exposure to direct sunlight. please contact your agilent technologies representative for more information and design for manufacture advice. application brief i-024 pulsed operating ranges for alingap leds vs. projected long term light output performance and other application information is available at: www.agilent.com/go/led_lamps. sunpower series precision optical performance hlmp-ed80-xxxxx
2 minimum radiometric intensity maximum forward voltage part number (mw/sr) at 20 ma (v) at 20 ma HLMP-ED80-K0T00 7.2 2.6 hlmp-ed80-k0000 7.2 2.4 device selection guide package dimensions 2.35 (0.093) max. 5.80 0.20 (0.228 0.008) 5.00 0.20 (0.197 0.008) 31.60 (1.244) note: all dimensions are in mm (inches). min. 0.70 (0.028) max. 1.00 (0.039) min. 2.54 0.38 (0.100 0.015) 0.50 0.10 (0.020 0.004) sq. typ. cathode lead cathode flat 8.71 0.20 (0.343 0.008 1.14 0.20 (0.045 0.008)
3 part numbering system mechanical option 00: bulk v f bin selections 0: maximum v f 2.4 v t: maximum v f 2.6 v maximum intensity bin 0: no maximum iv bin limit minimum intensity bin refer to device selection guide color d: 630 nm red package e: t-1 3/4 (5 mm) round lamp hlmp - x x x x - x x x xx absolute maximum ratings at t a = 25 c dc forward current [1,2,3] ..................................................................50 ma peak pulsed forward current [2,3] ................................................. 100 ma average forward current .................................................................30 ma reverse voltage (i r = 100 a) ................................................................ 5 v led junction temperature .............................................................. 130 c operating temperature .................................................. ?0 c to +100 c storage temperature ...................................................... ?0 c to +120 c wave solder temperature ........................................ 250 c for 3 seconds [1.59 mm (0.060 in.) below body] notes: 1. derate linearly as shown in figure 4. 2. for long term performance with minimal light output degradation, drive currents between 10 ma and 30 ma are recommended. for more information on recommended drive conditions, please refer to hp application brief i-024 (5966-3087e). 3. please contact your agilent sales representative about operating currents below 10 ma.
4 electrical/optical characteristics at t a = 25 c parameter symbol min. typ. max. units test conditions forward voltage ed80-xx0xx v f 2.00 2.40 v i f = 20 ma ed80-xxtxx 2.35 2.60 reverse voltage v r 520 v i r = 100 a peak wavelength peak 639 nm peak of wavelength of spectral distribution at i f = 20 ma dominant wavelength [1] d 630 nm spectral halfwidth ? 1/2 17 nm wavelength width at spectral distribution 1 / 2 power point at i f = 20 ma speed of response s 20 ns exponential time constant, e -t/ s capacitance c 40 pf v f = 0, f = 1 mhz thermal resistance r j-pin 240 c/w led junction-to-cathode lead luminous efficacy [5] v 155 lm/w emitted luminous power/emitted radiant power at i f = 20 ma viewing angle [2] 2 1 / 2 30 deg. radiometric intensity i e 7.23 50.50 mw/sr emitted radiant power at i f = 20 ma notes: 1. dominant wavelength, l d , is derived from the cie chromaticity diagram referenced to illuminant e. 2. q 1/2 is the off-axis angle where the luminous intensity is one half the on-axis intensity. 3. the radiometric intensity is measured on the mechanical axis of the lamp package. 4. the optical axis is closely aligned with the package mechanical axis. 5. the luminous intensity, i v , in candelas, may be found from the equation i v = i e h v , where i e is the radiometric intensity in watts per steradian and h v is the luminous efficacy in lumens/watt. 6. for option -xxtxx, max. forward votage (vf) is 2.6 v. refer to vf bin table. figure 1. relative intensity vs. peak wavelength. wavelength nm relative intensity 550 600 650 700 1.0 0.5 0 red figure 2a. forward current vs. forward voltage for option -xx0xx. current ma 1.0 0 v f forward voltage v 2.5 100 40 30 1.5 2.0 60 3.0 10 20 50 red 70 80 90
5 figure 2b. forward current vs. forward voltage for option -xxtxx. forward current 0 0 forward voltage v 2.5 50 40 30 1.5 2.0 3.0 10 20 1.0 0.5 figure 3. relative luminous intensity vs. forward current. relative radiometric intensity (normalized at 20 ma) 0 0 i f dc forward current ma 40 2.0 1.5 1.0 0.5 20 50 2.5 10 30 figure 4. maximum forward current vs. ambient temperature. derating based on t jmax = 130 c. i f forward current ma 0 0 t a ambient temperature c 40 80 50 40 30 20 10 20 60 100 r ja = 585 c/w r ja = 780 c/w figure 5. representative spatial radiation pattern for 30 viewing angle lamps. normalized radiometric intensity 1.00 0 angular displacement degrees 0.80 0.60 0.50 0.70 0.20 0.10 0.30 0.40 0.90 -20 -15 -10 0 5 10 15 20 25 -25 -5 bin id min. max. k 8.5 10.2 l 10.2 12.2 m 12.2 14.7 n 14.7 17.6 p 17.6 21.2 q 21.2 25.4 r 25.4 30.5 s 30.5 36.5 t 36.5 43.9 radiometric intensity bin limits (mw/sr at 20 ma) notes: 1. tolerance for each bin will be 15%. 2. bin categories are established for classification of products. products may not be available in all bin categories. 3. vf bin table only available for those number with options -xxtxx. vf bin table [3] bin id min. max. va 2.0 2.2 vb 2.2 2.4 vc 2.4 2.6 tolerance for each bin limit is 0.05 v.
www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (916) 788-6763 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (+65) 6756 2394 india, australia, new zealand: (+65) 6755 1939 japan: (+81 3) 3335-8152(domestic/interna- tional), or 0120-61-1280(domestic only) korea: (+65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (+65) 6755 2044 taiwan: (+65) 6755 1843 data subject to change. copyright ? 2004 agilent technologies, inc. june 23, 2004 5988-7916en
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